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Preliminary Data Sheet
Product Description
Sirenza Microdevices' SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 8 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
Gain & Return Loss Vs. Frequency
See App Circuit Page 6
SBW-5089
DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
Product Features
* Wideband Flat Gain to 3GHz: +/-1.4dB * P1dB = 13.4 @ 6GHz * Input / Output VSWR < 2:3 to 8GHz * Operates From Single Supply * Low Thermal Resistance * Darlington Configuration
30 20 10 0 -10 -20 -30 0 1 2 3 4 5 Frequency (GHz) 6 7 8 S11 S22 S21
Applications
* Wideband Instrumentation * Fiber Optic Driver * OC-48 * Basestation * SAT COM
U nits Frequency 850 MHz 3000 MHz 4200 MHz 6000 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz 1950MHz Min. 19.3 17.0 16.2 14.5 18.4 32.0 Typ. 20.3 18.0 17.2 15.5 20.1 19.4 35.5 34.0 13.0 6000 D C -6000MHz D C -6000MHz 1950 MHz 4.5 72 7 8 10 11 3.9 4.9 80 97 4.4 5.3 88 Max. 21.3 19.0 18.2 16.5
Symbol
Parameter Small Si gnal Gai n
( PC board and connector losses de-embeded )
G
dB
P 1dB OIP3 Pout
Output Power at 1dB C ompressi on Output Thi rd Order Intercept Poi nt Output Power @ -45dBc AC P IS-95 9 Forward C hannels
dB m dB m dB m MHz dB dB dB V mA C /W
Bandwi dth D etermi ned by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Worst case Input Return Loss Worst case Output Return Loss Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead)
Test Conditions:
VS = 8 V RBIAS = 39 Ohms
ID = 80 mA Typ. TL = 25C
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in lifesupport devices and/or system.Copyright 2003 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103325 Rev. A
PreliminaryPreliminary Data Sheet SBW-5089 Wideband DC-8 GHz MMIC Amplifier Typical RF Performance at Key Operating Frequencies
Frequency (MHz) Frequency (MHz)
Symbol Parameter Unit 500 850 1950 2400 3500 5800*
G OIP3 P 1dB IRL ORL S 21 NF
Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
dB dB m dB m dB dB dB dB
20.5 36.5 20.2 26 19 22 3.6
20.3 35.5 20.1 26 17.5 23 3.6
19.1 34.0 19.4 19 12 23 3.9
18.7 33.0 19.4 15 11 23 3.9
17.3 30.5 17.5 12 10.5 23 4.1
15.1 25.5 13.4 12.5 10.9 23 4.3
*NOTE: 5.8GHz data measured with tuned app circuit
P1dB vs. Frequency
25 22.5 20
Test Conditions: V = 8VS = 8 V ID = 80 mA V ID = 80 mA Typ. Typ. OIP3OIP3 Tone Spacing MHz, PoutPout tonetone = 0 Tone Spacing = 1 = 1 MHz, per per = 0dBm Test Conditions:S dBm TL = 25C ZS = ZL = 50 Ohms Basic Application Circuit RBIAS = 39 Ohms RBIAS = 39 Ohms TL = 25C ZS = ZL = 50 Ohms
Absolute Maximum Ratings
Parameter
+25c -40c +85c
Absolute Limit
130 mA
Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max Operating Dissipated Power Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
6V +17 dBm 0.65 W
+150C -40C to +85C +150C
P1dB(dBm)
17.5 15 12.5 10 7.5 5
Max. Storage Temp. ESD
Class 1C
0
1
2
3 Frequency(GHz)
4
5
6
Operati on of thi s devi ce beyond any one of these li mi ts may cause p e rma ne nt d a ma g e . F o r re li a b le co nti no us o p e ra ti o n, the d e vi ce voltage and current must not exceed the maxi mum operati ng values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
40 37.5 35 32.5
+25c -40c +85c
Noise Figure vs. Frequency
8
+25c
7
-40c +85c
OIP3(dBm)
30 27.5 25 22.5 20 17.5 15
Noise Figure(dB)
6 5 4 3 2 1 0
0
1
2
3 Frequency(GHz)
4
5
6
0
1
2
3 Frequency(GHz)
4
5
6
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103325 Rev. A
PreliminaryPreliminary Data Sheet SBW-5089 Wideband DC-8 GHz MMIC Amplifier
Test conditions: Bias Tee, Id=80mA, Vsup ply=8V, 39ohm drop resistor Basic App Circuit page 5
|S11| vs. Frequency
0 -10
|S21| vs. Frequency
25 20
S21 (dB)
S11 (dB)
15 10 5 0
+25C -40C +85C
-20 -30 -40 0 1 2 3 4 5 6 7 8 9 10
+25C -40C +85C
0
1
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Frequency (GHz)
|S12| vs. Frequency
-10 -15
+25C -40C +85C
|S22| vs. Frequency
0 -10
S12 (dB)
S22 (dB)
-20 -25 -30 0 1 2 3 4 5 6 7 8 9 10
-20 -30 -40 0 1 2 3 4 5 6 7 8 9 10
+25C -40C +85C
Frequency (GHz)
Frequency (GHz)
IS-95 @ 850MHz Adj. Channel Pwr. vs. Channel output Pwr. -30 -35 -40 -45 -50 -55 -60 -65 -70 6 8 10 12 dBm 14
-30 -35 -40 -45 dBc
+25c -40c +85c
IS-95 @ 1950MHz Adj. Channel Pwr. vs. Channel Output Power
dBc
-50 -55 -60 -65 -70 6 8 10 12 dBm 14
+25c -40c +85c
16
16
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-103325 Rev. A
PreliminaryPreliminary Data Sheet SBW-5089 Wideband DC-8 GHz MMIC Amplifier
Test conditions: Bias Tee, Id=80mA, Vsupply=8V, 39ohm drop resistor Tuned Circuit Application with broadband bias tee page 6
|S11| vs. Frequency
0 -10
|S21| vs. Frequency
25 20
S11 (dB)
S21 (dB)
15 10 5 0
+25C -40C +85C
-20 -30 -40 0 1 2 3 4 5 6
+25C -40C +85C
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Frequency (GHz)
|S12| vs. Frequency
-10
+25C
|S22| vs. Frequency
0 -10
-15
-40C
S12 (dB)
S22 (dB)
+85C
-20 -25 -30 0 1 2 3 4 5 6 7 8 9 10
-20 -30 -40 0 1 2 3 4 5 6 7
+25C -40C +85C
8
9
10
Frequency (GHz)
Frequency (GHz)
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-103325 Rev. A
PreliminaryPreliminary Data Sheet SBW-5089 Wideband DC-8 GHz MMIC Amplifier Basic Application Circuit (no tuning elements)
RBIAS
1 uF 1000 pF
Application Circuit Element Values
Frequency (Mhz ) Reference Designator 500 850 1950 2400 3500
VS
CD
LC
CB CD LC
220 pF 100 pF 68 nH
100 pF 68 pF 33 nH
68 pF 22 pF 22 nH
56 pF 22 pF 18 nH
39 pF 15 pF 15 nH
RF in CB
1 SWA-5089 3 2 CB
4
RF out
Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 7.5 V 33 8V 39 10 V 68 12 V 91
VS
RBIAS
Note: RBIAS provides DC bias stability over temperature.
1 uF 1000 pF Mounting Instructions
1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
BW5
CB
LC
CD CB
Pin #
Function RF IN
Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible.
Part Identification Marking The part will be marked with an "BW5" designator on the top surface of the package. 4
1
2, 4
GND
BW5
1 2 3
2 1 3
3
RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number SBW-5089 Reel Siz e 7" Devices/Reel 1000
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-103325 Rev. A
PreliminaryPreliminary Data Sheet SBW-5089 Wideband DC-8 GHz MMIC Amplifier Application Circuit with 5 - 8GHz tuning and broadband bias tee
4 RF in
DC BLOCK
1
SWA-5089
3
Z = 50 Elec. Len. = 13.1# #
RF out C1
2
BW5
IN
C1
OUT
C1 = 0.1pF 0805 AVX Substrate Material = Getek ML200C, 0 .031" thick, Er = 4.2, 1oz. cladding
SIRENZA MICRODEVICES ECB-100607 Rev B
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
6
http://www.sirenza.com
EDS-103325 Rev. A
PreliminaryPreliminary Data Sheet SBW-5089 Wideband DC-8 GHz MMIC Amplifier
PCB Pad Layout
Dimensions in inches [millimeters]
Nominal Package Dimensions
Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances.
Bottom View
Side View
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
7
http://www.sirenza.com
EDS-103325 Rev. A

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